Seminar:  From oxide epitaxy on Si to functional heterostructures using PLD

Type of the event: Seminar (lecture)

Lecturer: Prof. Dr. Matjaž Spreitzer (Head of Advanced Materials Department, Jožef Stefan Institute)Type of the event: Seminar (lecture)

When:
April 20, 2026 at 11:00

Where:
Faculty of Electrical Engineering, University of Ljubljana
Tržaška cesta 25, Ljubljana (Diplomska soba, B0)

and online: Zoom Link to the event

About the lecture:
From oxide epitaxy on Si to functional heterostructures using PLD In the lecture, I will present 15 years of development of pulsed laser deposition (PLD) at the Jožef Stefan Institute, as one of the key techniques for the synthesis of epitaxial thin films and heterostructures. At the Department of Advanced Materials Research, in collaboration with the Nanocenter, we established the first PLD laboratory in Slovenia, which today includes two complementary PLD systems. The main scientific challenge of the laboratory relates to the atomically controlled growth of oxides on semiconductor platforms. In the case of a Si substrate, the key integration step is Sr-passivation and control of the reconstruction of the Si surface. The order of the passivated surface, which is manifested in terraces with one-dimensional chains of atoms, is crucial for further epitaxial growth of oxides. This includes a kinetically controlled sequential deposition process, which enables the growth of a protective and ordered SrTiO₃ layer. Based on the electronic coupling of SrTiO₃ with Si, we demonstrated the possibility of using the prepared heterostructures for the conversion of solar energy into green hydrogen. As an alternative to direct epitaxy, we have also developed a van der Waals epitaxy process that takes place via an intermediate graphene layer. This allows the preparation of a high-quality SrTiO₃ pseudosubstrate and reduces the requirements for clamping and mutual reactivity. On the pseudosubstrates prepared in this way, we further studied magnetic, ferroelectric and piezoelectric heterostructures and targeted adaptation of functionalities with elastic and thermal stresses, which I will support in the lecture by showing concrete examples.

The lecture is intended for:
Researchers, engineers, students, and professionals working in the fields of semiconductor technologies, materials science, microelectronics, and related areas. All others interested in the topic are kindly invited as well.

Join the event online here: https://uni-lj-si.zoom.us/j/95331027624

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UNIVERSITIES AND RTOs of CC CHIP.SI

University of Ljubljana
UL FE & UL FRI
• cleanroom facilities sub-micron (Bi)CMOS
• mixed signal ASIC design, FPGA, RISC
• THz sensors and arrays, MEMS
• Si based photonic integrated circuits

University of Maribor
FERI
• mixed signal ASIC design (flight-proven chips)
• advanced waveguide and fiber sensor solutions
• micromachining technologies, MEMS, MOEMS

 

University of Nova Gorica
• organic electronics
• graphene based devices
• electro-optical characterization

Jožef Stefan Institute
• material research
• radiation detectors
• quantum technology
• thin-film chip related technologies
• ASIC design

CoE Nanoscience & Nanotechnology
Nanocenter
• nanofabrication facilities
• advanced quantum devices (supercond. transmon qubits)
• energy-efficient ultra fast memory (cryo, quantum)

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